| [201809] |
J. Breuer, M. Bachmann, F. Düsberg, A. Pahlke, S. Edler, C. Langer, C. Prommesberger, R. Ławrowski, P. Serbun, D. Lützenkirchen-Hecht and R. Schreiner
"Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays."
Journal of Vacuum Science & Technology B, vol. 36, no. 5, p. 051805, Sep. 2018.
[ DOI ]
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| [201807] |
R. Ławrowski, C. Langer, J. Sellmair and R. Schreiner
"Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition," in
Vacuum Nanoelectronics Conference (IVNC), 2018 31st
International, 2018, pp. 200-201.
[ DOI ]
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| [201807] |
P. Serbun, V. Porshyn, C. Prommesberger, C. Langer, R. Ławrowski, R. Schreiner, G. Müller and D. Lützenkirchen-Hecht
"Field emission behavior of single n- and p-type black Si pillar structures," in
Vacuum Nanoelectronics Conference (IVNC), 2018 31st
International, 2018, pp. 150-151.
[ DOI ]
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| [201807] |
C. Langer, M. Hausladen, C. Prommesberger, R. Ławrowski, M. Bachmann, F. Düsberg, A. Pahlke, M. Shamonin and R. Schreiner
"Field emission current investigation of p-type and metallized silicon emitters in the frequency domain," in
Vacuum Nanoelectronics Conference (IVNC), 2018 31st
International, 2018, pp. 110-111.
[ DOI ]
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|
| [201712] |
C. Prommesberger, M. Bachmann, F. Düsberg, C. Langer, R. Ławrowski, M. Hofmann, A. Pahlke and R. Schreiner
"Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes. "
IEEE Transactions on Electron Devices, 64.12 (2017): 5128-5133.
[ DOI ]
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|
| [201710] |
R. Ławrowski, C. Langer, C. Prommesberger and R. Schreiner
"Light emitting diodes based on three-dimensional epitaxial grown
crystalline GaN rods," in
Proc. of MST Kongress, Presented at the MikroSystemTechnik Kongress 2017, VDE Verlag GmbH, Munich, Germany, pp. 131-134. [ISBN 978-3-8007-4491-6]
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| [201709] |
S. Edler, M. Bachmann, J. Breuer, F. Dams, F. Düsberg, M. Hofmann, J. Jakšič, A. Pahlke, C. Langer, R. Ławrowski, C. Prommesberger and R. Schreiner
"Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup."
Journal of Applied Physics 122, 124503.
[ DOI ]
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| [201707] |
R. Ławrowski, C. Langer, C. Prommesberger and R. Schreiner
"Microrods and microlines by three-dimensional epitaxially grown GaN for field emission cathodes," in
Vacuum Nanoelectronics Conference (IVNC), 2017 30th
International, 2017, pp. 130-131.
[ DOI ]
|
|
| [201707] |
C. Prommesberger, C. Langer, R. Ławrowski and R. Schreiner
"Benzocyclobutene as a novel integrated spacer material in a field emission electron source," in
Vacuum Nanoelectronics Conference (IVNC), 2017 30th
International, 2017, pp. 192-193.
[ DOI ]
|
|
| [201707] |
M. Bachmann, F. Dams, F. Düsberg, M. Hofmann, A. Pahlke, C. Langer, R. Ławrowski, C. Prommesberger and R. Schreiner
"Control of the electron source current," in
Vacuum Nanoelectronics Conference (IVNC), 2017 30th
International, 2017, pp. 66-67.
[ DOI ]
|
|
| [201705] |
C. Prommesberger, R. Ławrowski, C. Langer, M. Mecani, Y. Huang, J. She and R. Schreiner
"Field emission properties of ring-shaped Si ridges with DLC coating," in
Tiginyanu, I.M. (Ed.), Proc. of SPIE. Presented at the SPIE Microtechnology 2017, International Society for Optics and Photonics, Barcelona, Spain, p. 102480H–102480H–8.
[ DOI ]
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| [201612] |
M. Bachmann, F. Dams, F. Düsberg, M. Hofmann, A. Pahlke, C. Langer, R. Ławrowski, C. Prommesberger, R. Schreiner,
P. Serbun, D. Lützenkirchen-Hecht and G. Müller.
"Extraction of the characteristics of current-limiting elements from field emission measurement data,"
Journal of Vacuum Science & Technology B, 35(2):02C103, Dec
2016.
[ DOI ]
|
|
| [201612] |
C. Prommesberger, C. Langer, R. Ławrowski, R. Schreiner.
"Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior,
"
Journal of Vacuum Science & Technology B, 35(1):012201, Dec
2016.
[ DOI ] |
|
| [201607] |
R. Ławrowski, C. Langer, C. Prommesberger, and R. Schreiner.
"Field emission from three-dimensional epitaxial grown
GaN-microrods," in
Vacuum Nanoelectronics Conference (IVNC), 2016 29th
International, 2016, pp. 87-88.
[ DOI ]
|
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| [201607] |
C. Langer, C. Prommesberger, R. Ławrowski, R. Schreiner, Y. Huang, and J. She.
"Gated p-Si field emission cathode applied in an ionization vacuum
gauge," in
Vacuum Nanoelectronics Conference (IVNC), 2016 29th
International, 2016, pp. 145-146.
[ DOI ]
|
|
| [201607] |
C. Prommesberger, C. Langer, R. Ławrowski, and R. Schreiner.
"Field emission from black silicon structures with integrated gate
electrode," in
Vacuum Nanoelectronics Conference (IVNC), 2016 29th
International, 2016, pp. 219-220.
[ DOI ]
|
|
| [201607] |
M. Bachmann, F. Dams, F. Düsberg, M. Hofmann, A. Pahlke, C. Langer,
R. Ławrowski, C. Prommesberger, and R. Schreiner.
"Extraction of the characteristics of limiting elements from field
emission measurement data," in
Vacuum Nanoelectronics Conference (IVNC), 2016 29th
International, 2016, pp. 81-82.
[ DOI ]
|
|
| [201607] |
P. Serbun, V. Porshyn, G. Müller, S. Mingels, D. Lützenkirchen-Hecht,
M. Bachmann, F. Düsberg, F. Dams, M. Hofmann, A. Pahlke, C. Prommesberger,
C. Langer, R. Ławrowski, and R. Schreiner.
"Field emission behavior of Au-tip-coated p-type Si pillar
structures," in
Vacuum Nanoelectronics Conference (IVNC), 2016 29th
International, 2016, pp. 181-182.
[ DOI ] |
|
| [201603] |
C. Langer, C. Prommesberger, R. Ławrowski, R. Schreiner,
P. Serbun, G. Müller, F. Düsberg, M. Hofmann, M.
Bachmann, and A. Pahlke.
"Field emission properties of p-type black silicon on pillar
structures,"
Journal of Vacuum Science & Technology B, 34(2):02G107, March
2016.
[ DOI ]
|
|
| [201507] |
C. Langer, C. Prommesberger, R. Ławrowski, F. Müller P.
Serbun, G. Müller, R. Schreiner,“Enhanced
field emission from p-doped black silicon on pillar
structures," in
Vacuum Nanoelectronics Conference (IVNC), 2015 28th
International, 2015, pp. 104–105. [ DOI ] |
|
| [201507] |
R. Ławrowski, C. Langer, C. Prommesberger, S. Mingels,
P. Serbun, G. Müller, R. Schreiner,“Field
emisson from surface textured GaN with burried double-
heterostructures," in Vacuum Nanoelectronics
Conference (IVNC), 2015 28th International, 2015, pp.
106–107. [ DOI ] |
|
| [201507] |
C. Prommesberger, C. Langer, R. Ławrowski, F. Dams, R.
Schreiner,“Gated
p-Si field emitter arrays for sensor applications,"in
Vacuum Nanoelectronics Conference (IVNC), 2015 28th
International, 2015, pp. 164–165. [ DOI ] |
|
| [201507] |
R. Schreiner, C. Langer, C. Prommesberger, R. Ławrowski,
F. Dams, M. Bachmann, F. "Düsberg, M. Hofmann, A.
Pahlke, P. Serbun, S. Mingels, G. Müller,"„Semiconductor
"field emission electron sources using a modular system
concept for application in sensors and x-ray-sources,"in
Vacuum Nanoelectronics Conference (IVNC), 2015 28th
International, 2015, pp. 178–179. [ DOI ] |
|
| [201507] |
P. Serbun, G. Müller, C. Prommesberger, C. Langer, F.
Dams, R. Ławroski, R. Schreiner,"“Comparison
of integral and local field emission properties of
Mo-coated p-Si tip arrays,"in
Vacuum Nanoelectronics Conference (IVNC), 2015 28th
International, 2015, pp. 192–193. [ DOI ] |
|
| [201507] |
M. Bachmann, F. Düsberg, M. Hofmann, A. Pahlke, F. Dams,
C. Langer, C. Prommesberger, R. Ławrowski, R. Schreiner,"“Stability
investigation of high aspect ratio n-type silicon field
emitter arrays,in Vacuum Nanoelectronics
Conference (IVNC), 2015 28th International, 2015, pp.
204–205. [ DOI ] |
|
| [201408] |
C. Langer, C. Prommesberger, R. Ławrowski, F. Dams, and
R. Schreiner,"“Simulation
and Fabrication of Silicon Field Emission Cathodes for
Cold Electron Sources,"Advanced
Materials Research, vol. 1024, pp. 48–51, Aug. 2014."[ DOI ] |
|
| [201407] |
R. Ławrowski, C. Langer, C. Prommesberger, F. Dams, M.
Bachmann, and R. Schreiner,"“Fabrication
and simulation of silicon structures with high aspect
ratio for field emission devices,"in
Vacuum Nanoelectronics Conference (IVNC), 2014 27th
International, 2014, pp. 193–194.[ DOI ] |
|
| [201407] |
C. Langer, R. Ławrowski, C. Prommesberger, F. Dams, P.
Serbun, M. Bachmann, G. Muller, and R. Schreiner,"“High
aspect ratio silicon tip cathodes for application in
field emission electron sources,"in
Vacuum Nanoelectronics Conference (IVNC), 2014 27th
International, 2014, pp. 222–223.[ DOI ] |
|
| [201404] |
R. Ławrowski, C. Prommesberger, C. Langer, F. Dams, and
R. Schreiner,“Improvement
of Homogeneity and Aspect Ratio of Silicon Tips for
Field Emission by Reactive-Ion Etching,”"Advances
in Materials Science and Engineering, vol. 2014, p.
e948708, Apr. 2014. [ DOI ] |
|
| [201403] |
R. Ławrowski, C. Langer, C. Prommesberger, F. Dams, P.
Serbun, G. Müller, and R. Schreiner,"“Spitzen-
und Kantenemitter aus Silizium mit einem hohen
Aspektverhältnis für Ionisationsgassensoren,"in
4. Landshuter Symposium Mikrosystemtechnik (2014), 2014,
pp. 28–35. |
|
| [201403] |
C. Prommesberger, R. Ławrowski, C. Langer, F. Dams, and
R. Schreiner,"“Realisierung
von Siliziumspitzenarrays mit integrierter
Gate-Elektrode für Anwendungen in der Vakuumsensorik,"in
4. Landshuter Symposium Mikrosystemtechnik (2014), 2014,
pp. 36–41. |
|
| [201310] |
R. Ławrowski, C. Prommesberger, C. Langer, F. Dams, and
R. Schreiner,"“Influence
of reactive ion etching parameters on the geometry of
silicon tip cathodes for field emission,"in
Applied Research Conference 2013, 2013, p. 67. |
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